KIA Semicon Tech KIA3510AD

KIA Semicon Tech · FETs & Power MOSFETs · MPN KIA3510AD

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Specifications

Gate Charge(Qg)60nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)339pF
Current - Continuous Drain(Id)65A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation166W
Reverse Transfer Capacitance (Crss@Vds)179pF
RDS(on)-
Number1 N-channel
Input Capacitance(Ciss)2.946nF
Type-

Technical details

N-Channel 100V 166W Surface Mount TO-252-2(DPAK)

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