KIA Semicon Tech KIA3407

KIA Semicon Tech · FETs & Power MOSFETs · MPN KIA3407

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Specifications

Gate Charge(Qg)18nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)120pF
Current - Continuous Drain(Id)4.1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation1.4W
Reverse Transfer Capacitance (Crss@Vds)75pF
RDS(on)90mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)840pF
TypeP-Channel

Technical details

P-Channel 30V 4.1A 1.4W Surface Mount SOT-23

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