KIA Semicon Tech KIA2906AP

KIA Semicon Tech · FETs & Power MOSFETs · MPN KIA2906AP

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Specifications

Gate Charge(Qg)66.34nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)926pF
Current - Continuous Drain(Id)130A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation200W
RDS(on)7mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)451pF
Number1 N-channel
Input Capacitance(Ciss)3.1nF

Technical details

N-Channel 60V 130A 200W Through Hole TO-220-3

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