KIA Semicon Tech KIA2806AP

KIA Semicon Tech · FETs & Power MOSFETs · MPN KIA2806AP

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Specifications

Gate Charge(Qg)130nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)857pF
Current - Continuous Drain(Id)150A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)4pF
RDS(on)4.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.376nF
Type-

Technical details

N-Channel 60V 150A Through Hole TO-220

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