KIA Semicon Tech KIA18N50HF

KIA Semicon Tech · FETs & Power MOSFETs · MPN KIA18N50HF

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Specifications

Gate Charge(Qg)50nC@10V
Drain to Source Voltage500V
Output Capacitance(Coss)400pF
Current - Continuous Drain(Id)18A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)40pF
RDS(on)320mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.5nF
TypeN-Channel

Technical details

N-Channel 500V 18A Through Hole TO-220F-3

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