KIA Semicon Tech KCY3310A

KIA Semicon Tech · FETs & Power MOSFETs · MPN KCY3310A

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Specifications

Gate Charge(Qg)66nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)1.25nF
Current - Continuous Drain(Id)85A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation90W
Reverse Transfer Capacitance (Crss@Vds)43pF
RDS(on)5.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.6nF
TypeN-Channel

Technical details

N-Channel 100V 85A Surface Mount DFN-8(5x6)

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