KIA Semicon Tech KCT1810A

KIA Semicon Tech · FETs & Power MOSFETs · MPN KCT1810A

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Specifications

Gate Charge(Qg)165nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)1.472nF
Current - Continuous Drain(Id)260A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation313W
Reverse Transfer Capacitance (Crss@Vds)1.648nF
RDS(on)1.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)15.016nF
TypeN-Channel

Technical details

100V 260A 3V 313W 1.6mΩ@10V 1 N-channel N-Channel TOLL-8 Single FETs, MOSFETs RoHS

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