KIA Semicon Tech KCT050N08N

KIA Semicon Tech · FETs & Power MOSFETs · MPN KCT050N08N

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Specifications

Gate Charge(Qg)55nC@10V
Drain to Source Voltage85V
Current - Continuous Drain(Id)120A
Output Capacitance(Coss)1.057nF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation174W
RDS(on)4.1mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)26pF
Number1 N-channel
Input Capacitance(Ciss)3.086nF

Technical details

85V 120A 3V 174W 4.1mΩ@10V 1 N-channel TOLL-8 Single FETs, MOSFETs RoHS

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