KIA Semicon Tech KCT040N10N

KIA Semicon Tech · FETs & Power MOSFETs · MPN KCT040N10N

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Specifications

Gate Charge(Qg)90nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)952pF
Current - Continuous Drain(Id)172A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation227W
Reverse Transfer Capacitance (Crss@Vds)33pF
RDS(on)3.2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.772nF

Technical details

100V 172A 3V 227W 3.2mΩ@10V 1 N-channel TOLL-8 Single FETs, MOSFETs RoHS

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