KIA Semicon Tech · FETs & Power MOSFETs · MPN KCT017N10N
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| Gate Charge(Qg) | 176nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 259A |
| Output Capacitance(Coss) | 1.36nF |
| Operating Temperature - | -55℃~+155℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 250W |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF |
| RDS(on) | 1.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 10.12nF |
| Type | N-Channel |
100V 259A 3V 250W 1.4mΩ@10V 1 N-channel N-Channel TOLL-8 Single FETs, MOSFETs RoHS