KIA Semicon Tech KCT012N10N

KIA Semicon Tech · FETs & Power MOSFETs · MPN KCT012N10N

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Specifications

Gate Charge(Qg)260nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)330A
Output Capacitance(Coss)1.93nF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation431W
Reverse Transfer Capacitance (Crss@Vds)75pF
RDS(on)1.2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)15.8nF
TypeN-Channel

Technical details

100V 330A 3V 431W 1.2mΩ@10V 1 N-channel N-Channel TOLL-8 Single FETs, MOSFETs RoHS

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