KIA Semicon Tech KCB3010A

KIA Semicon Tech · FETs & Power MOSFETs · MPN KCB3010A

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Specifications

Gate Charge(Qg)89.5nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)880pF
Current - Continuous Drain(Id)163A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation175W
Reverse Transfer Capacitance (Crss@Vds)145pF
RDS(on)4.5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)6.7nF
TypeN-Channel

Technical details

N-Channel 100V 163A 175W Surface Mount TO-263

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