KEXIN SI4435DY

KEXIN · FETs & Power MOSFETs · MPN SI4435DY

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Specifications

Gate Charge(Qg)60nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)8.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation2.5W
RDS(on)35mΩ@4.5V
Number1 P-Channel
Vgs±20V
TypeP-Channel

Technical details

P-Channel 30V 8.8A 2.5W Surface Mount SOP-8

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