KEXIN KI2309DS

KEXIN · FETs & Power MOSFETs · MPN KI2309DS

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Specifications

Gate Charge(Qg)5.4nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)1.25A
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation1.25W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)275mΩ@10V;550mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)-
TypeP-Channel

Technical details

60V 1.25A 3V 1.25W 1 P-Channel P-Channel SOT-23-3 Single FETs, MOSFETs RoHS

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