KEC KRA101S-RTK/P

KEC · Transistors (BJTs) · MPN KRA101S-RTK/P

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Specifications

Transition frequency(fT)200MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain55
Vce Saturation(VCE(sat))300mV
Current - Collector(Ic)100mA
Output Voltage(VO(on))300mV
Input Resistor4.7kΩ
typePNP
Resistor Ratio1
Number1 PNP Pre-Biased
Pd - Power Dissipation200mW
Voltage - Input(Max)(VI(off))1V

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 200mW Surface Mount SOT-23

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