KEC 2N5551-AT/P

KEC · Transistors (BJTs) · MPN 2N5551-AT/P

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)300MHz
Collector - Emitter Voltage VCEO160V
Emitter-Base Voltage VEBO6V
DC Current Gain80
Pd - Power Dissipation625mW
type-
Current - Collector(Ic)600mA
Operating Temperature-
Vce Saturation(VCE(sat))200mV

Technical details

160V 80 600mA TO-92-3 Single Bipolar Transistors RoHS

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