JTD JTDBSS138

JTD · FETs & Power MOSFETs · MPN JTDBSS138

No reviews yet — be the first to review JTD JTDBSS138.

Specifications

Drain to Source Voltage50V
Gate Charge(Qg)1.7nC@10V
Current - Continuous Drain(Id)340mA
Output Capacitance(Coss)11.5pF
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation350mW
RDS(on)1.1Ω@10V;1.2Ω@4.5V
Reverse Transfer Capacitance (Crss@Vds)6.5pF
Number1 N-channel
Input Capacitance(Ciss)17.5pF
TypeN-Channel

Technical details

50V 340mA 1.2V 350mW 1 N-channel N-Channel SOT-23 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs