JTD · FETs & Power MOSFETs · MPN JTDBC3216
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| Gate Charge(Qg) | 14nC |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 16A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 700mV |
| Pd - Power Dissipation | 3.1W |
| RDS(on) | 11.3mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 280pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.28nF |
P-Channel 20V 16A 3.1W Surface Mount PDFN-8L(3x3)