JTD JTD3400

JTD · FETs & Power MOSFETs · MPN JTD3400

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)9.5nC@6V
Output Capacitance(Coss)66pF
Current - Continuous Drain(Id)5.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.1V
Pd - Power Dissipation350mW
RDS(on)21mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)77pF
Number1 N-channel
Input Capacitance(Ciss)1.05nF
TypeN-Channel

Technical details

N-Channel 30V 5.8A 350mW Surface Mount SOT-23

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