JTD JTD2SC1623W

JTD · Transistors (BJTs) · MPN JTD2SC1623W

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)150MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain1000
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation450mW
Number1 NPN
typeNPN
Current - Collector(Ic)100mA
Vce Saturation(VCE(sat))300mV

Technical details

50V 1000 1 NPN NPN 100mA SOT-23 Single Bipolar Transistors RoHS

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