JTD JTD2317B

JTD · FETs & Power MOSFETs · MPN JTD2317B

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Specifications

Gate Charge(Qg)12nC
Drain to Source Voltage16V
Current - Continuous Drain(Id)6.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation1.2W
RDS(on)25mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)40pF
Number1 P-Channel
Input Capacitance(Ciss)500pF

Technical details

P-Channel 16V 6.5A 1.2W Surface Mount SOT-23-3L

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