JTD JTD2317

JTD · FETs & Power MOSFETs · MPN JTD2317

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Specifications

Gate Charge(Qg)13nC
Drain to Source Voltage20V
Current - Continuous Drain(Id)7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))500mV
Pd - Power Dissipation1.2W
RDS(on)23mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)88pF
Number1 P-Channel
Input Capacitance(Ciss)950pF

Technical details

P-Channel 20V 7A 1.2W Surface Mount SOT-23-3L

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