JTD JTD2302B

JTD · FETs & Power MOSFETs · MPN JTD2302B

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)4nC@4.5V
Current - Continuous Drain(Id)2.8A
Output Capacitance(Coss)120pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))650mV
Pd - Power Dissipation400mW
RDS(on)27mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)80pF
Number1 N-channel
Input Capacitance(Ciss)300pF
TypeN-Channel

Technical details

20V 2.8A 650mV 400mW 27mΩ@4.5V 1 N-channel N-Channel SOT-23 Single FETs, MOSFETs RoHS

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