JTD · FETs & Power MOSFETs · MPN JTD2301B
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| Gate Charge(Qg) | 5.5nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 75pF |
| Current - Continuous Drain(Id) | 2.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 650mV |
| Pd - Power Dissipation | 400mW |
| RDS(on) | 72mΩ@4.5V;99mΩ@2.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 55pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 405pF |
| Type | P-Channel |
20V 2.8A 650mV 400mW 1 P-Channel P-Channel SOT-23 Single FETs, MOSFETs RoHS