JTD JTD2301A

JTD · FETs & Power MOSFETs · MPN JTD2301A

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)3.3nC@2.5V
Current - Continuous Drain(Id)3A
Output Capacitance(Coss)75pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation1W
RDS(on)64mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)55pF
Number1 P-Channel
Input Capacitance(Ciss)405pF
TypeP-Channel

Technical details

20V 3A 700mV 1W 64mΩ@4.5V 1 P-Channel P-Channel SOT-23 Single FETs, MOSFETs RoHS

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