JSMSEMI SUD45P03-10-E3

JSMSEMI · FETs & Power MOSFETs · MPN SUD45P03-10-E3

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Specifications

Gate Charge(Qg)40nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation75W
Reverse Transfer Capacitance (Crss@Vds)285pF
RDS(on)14mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)2.35nF

Technical details

P-Channel 30V 50A 75W Surface Mount TO-252

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