JSMSEMI STW75N65DM6

JSMSEMI · FETs & Power MOSFETs · MPN STW75N65DM6

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Specifications

Gate Charge(Qg)103nC@15V
Drain to Source Voltage650V
Output Capacitance(Coss)246pF
Current - Continuous Drain(Id)85A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.9V
Pd - Power Dissipation312W
RDS(on)28mΩ@18V
Reverse Transfer Capacitance (Crss@Vds)12pF
Input Capacitance(Ciss)2.682nF

Technical details

650V 85A 312W Through Hole TO-247-4

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