JSMSEMI STD10P6F6-JSM

JSMSEMI · FETs & Power MOSFETs · MPN STD10P6F6-JSM

No reviews yet — be the first to review JSMSEMI STD10P6F6-JSM.

Specifications

Drain to Source Voltage60V
Gate Charge(Qg)4.5nC@4.5V
Output Capacitance(Coss)-
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation20.8W
RDS(on)266mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)-
Number1 P-Channel
Input Capacitance(Ciss)530pF
TypeP-Channel

Technical details

60V 10A 2.5V 20.8W 266mΩ@4.5V 1 P-Channel P-Channel TO-252 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs