JSMSEMI · FETs & Power MOSFETs · MPN STD10P6F6-JSM
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 4.5nC@4.5V |
| Output Capacitance(Coss) | - |
| Current - Continuous Drain(Id) | 10A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 20.8W |
| RDS(on) | 266mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 530pF |
| Type | P-Channel |
60V 10A 2.5V 20.8W 266mΩ@4.5V 1 P-Channel P-Channel TO-252 Single FETs, MOSFETs RoHS