JSMSEMI SME10N15-G

JSMSEMI · FETs & Power MOSFETs · MPN SME10N15-G

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Specifications

Gate Charge(Qg)19nC@10V
Drain to Source Voltage200V
Output Capacitance(Coss)87pF
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation74W
Reverse Transfer Capacitance (Crss@Vds)37pF
RDS(on)300mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)605pF

Technical details

N-Channel 200V 9A 74W Surface Mount TO-252

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