JSMSEMI · FETs & Power MOSFETs · MPN SIA519EDJ-T1-GE3
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| Gate Charge(Qg) | 10.5nC@10V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 105pF |
| Current - Continuous Drain(Id) | 4.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.4V |
| Pd - Power Dissipation | 7.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF |
| RDS(on) | 90mΩ@4.5V |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 350pF |
| Type | N-Channel + P-Channel |
N-Channel+P-Channel Array 20V 4.2A 7.8W Surface Mount WDFN-6-EP(2x2)