JSMSEMI · FETs & Power MOSFETs · MPN SIA517DJ-T1-GE3-JSM
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| Gate Charge(Qg) | 12.5nC@4.5V |
|---|---|
| Drain to Source Voltage | 12V |
| Current - Continuous Drain(Id) | 4.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 1.9W |
| Reverse Transfer Capacitance (Crss@Vds) | 100pF |
| RDS(on) | 61mΩ@4.5V |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 590pF |
| Type | N-Channel + P-Channel |
N-Channel+P-Channel Array 12V 4.5A 1.9W Surface Mount WDFN-6-EP(2x2)