JSMSEMI SI9801DY-T1-E3-JSM

JSMSEMI · FETs & Power MOSFETs · MPN SI9801DY-T1-E3-JSM

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Specifications

Gate Charge(Qg)7.2nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)7.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)41pF
RDS(on)-
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)373pF

Technical details

N-Channel+P-Channel Array 30V 7.2A 2W Surface Mount SOP-8

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