JSMSEMI SI9426DY-T1-E3-JSM

JSMSEMI · FETs & Power MOSFETs · MPN SI9426DY-T1-E3-JSM

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)21nC@10V
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation3W
Reverse Transfer Capacitance (Crss@Vds)150pF
RDS(on)8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.11nF
TypeN-Channel

Technical details

30V 12A 2.5V 3W 8mΩ@10V 1 N-channel N-Channel SOP-8 Single FETs, MOSFETs RoHS

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