JSMSEMI SI7884BDP-T1-GE3-JSM

JSMSEMI · FETs & Power MOSFETs · MPN SI7884BDP-T1-GE3-JSM

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Specifications

Gate Charge(Qg)50nC
Drain to Source Voltage40V
Current - Continuous Drain(Id)90A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation83W
Reverse Transfer Capacitance (Crss@Vds)220pF
RDS(on)5.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.58nF

Technical details

N-Channel 40V 90A 83W Surface Mount DFN5060-8L

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