JSMSEMI · FETs & Power MOSFETs · MPN SI4816BDY-T1-JSM
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| Gate Charge(Qg) | 30nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 8.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 1.31W |
| Reverse Transfer Capacitance (Crss@Vds) | 111pF |
| RDS(on) | 11.5mΩ@10V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.424nF |
30V 8.8A 2.5V 1.31W 11.5mΩ@10V 2 N-Channel SOP-8 Single FETs, MOSFETs RoHS