JSMSEMI · FETs & Power MOSFETs · MPN SI4812BDY-T1-E3-JSM
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 81.6nC@15V |
| Current - Continuous Drain(Id) | 18A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 2.1W |
| Reverse Transfer Capacitance (Crss@Vds) | 423pF |
| RDS(on) | 6mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 9.72nF |
30V 18A 1V 2.1W 6mΩ@4.5V 1 N-channel SOP-8 Single FETs, MOSFETs RoHS