JSMSEMI SI4532CDY-T1-GE3-JSM

JSMSEMI · FETs & Power MOSFETs · MPN SI4532CDY-T1-GE3-JSM

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)63nC@10V
Output Capacitance(Coss)115pF
Current - Continuous Drain(Id)8A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation-
RDS(on)24mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)57pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)620pF
TypeN-Channel + P-Channel

Technical details

30V 8A 2V 24mΩ@4.5V 1 N-Channel + 1 P-Channel N-Channel + P-Channel SOP-8 Single FETs, MOSFETs RoHS

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