JSMSEMI · FETs & Power MOSFETs · MPN SI2336DS-T1-GE3-JSM
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | - |
| Current - Continuous Drain(Id) | 5.8A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 1.4V |
| Pd - Power Dissipation | 350mW |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 40mΩ@4.5V |
| Number | - |
| Input Capacitance(Ciss) | - |
| Type | N-Channel |
30V 5.8A 1.4V 350mW 40mΩ@4.5V N-Channel SOT-23 Single FETs, MOSFETs RoHS