JSMSEMI · FETs & Power MOSFETs · MPN SI2333DS-T1-GE3
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| Gate Charge(Qg) | 11.1nC@10V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 4.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 1.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 75.5pF |
| RDS(on) | 30mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 989pF |
P-Channel 20V 4.2A 1.5W Surface Mount SOT23-3