JSMSEMI · FETs & Power MOSFETs · MPN SI2318CDS-T1-GE3-JSM
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| Gate Charge(Qg) | 11nC@20V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 58pF |
| Current - Continuous Drain(Id) | 5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 1.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF |
| RDS(on) | 60mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 435pF |
| Type | N-Channel |
40V 5A 2.2V 1.6W 60mΩ@4.5V 1 N-channel N-Channel SOT-23 Single FETs, MOSFETs RoHS