JSMSEMI · FETs & Power MOSFETs · MPN SI2301DS-T1-GE3-JSM
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| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 10nC@4.5V |
| Output Capacitance(Coss) | - |
| Current - Continuous Drain(Id) | 3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 1.25W |
| RDS(on) | 140mΩ@2.5V |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 415pF |
| Type | - |
20V 3A 1V 1.25W 140mΩ@2.5V 1 P-Channel SOT-23 Single FETs, MOSFETs RoHS