JSMSEMI SI2301-A1SHB

JSMSEMI · FETs & Power MOSFETs · MPN SI2301-A1SHB

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)10nC@4.5V
Current - Continuous Drain(Id)2.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation350mW
Reverse Transfer Capacitance (Crss@Vds)55pF
RDS(on)112mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)405pF

Technical details

P-Channel 20V 2.3A 0.35W Surface Mount SOT-23

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