JSMSEMI · FETs & Power MOSFETs · MPN SI1555DL-T1-GE3-JSM
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| Output Capacitance(Coss) | 34pF |
|---|---|
| Pd - Power Dissipation | 300mW |
| Gate Charge(Qg) | 1.1nC |
| Drain to Source Voltage | 20V |
| Configuration | - |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.1V |
| RDS(on) | 180mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 16pF |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 113pF |
300mW 20V 1.1V 180mΩ@4.5V 1 N-Channel + 1 P-Channel N-Channel + P-Channel SOT-363 Single FETs, MOSFETs RoHS