JSMSEMI SHYG016N10NS1TA

JSMSEMI · FETs & Power MOSFETs · MPN SHYG016N10NS1TA

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Specifications

Drain to Source Voltage100V
Current - Continuous Drain(Id)370A
Output Capacitance(Coss)1.93nF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation431W
Reverse Transfer Capacitance (Crss@Vds)75pF
RDS(on)1.2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)15.8nF

Technical details

100V 370A Surface Mount TOLL-8

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