JSMSEMI · FETs & Power MOSFETs · MPN SHYG015N04LS1C2
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| Gate Charge(Qg) | 87nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 1.85nF |
| Current - Continuous Drain(Id) | 150A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Pd - Power Dissipation | 114W |
| Reverse Transfer Capacitance (Crss@Vds) | 65pF |
| RDS(on) | 1.1mΩ@10V;1.7mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.5nF |
40V 150A 1.7V 114W 1 N-channel PDFN-8L(5x6) Single FETs, MOSFETs RoHS