JSMSEMI SHY19P03D

JSMSEMI · FETs & Power MOSFETs · MPN SHY19P03D

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)53nC
Output Capacitance(Coss)640pF
Current - Continuous Drain(Id)15A
Operating Temperature --55℃~+150℃
Pd - Power Dissipation2.5W
RDS(on)5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)440pF
Number1 P-Channel
Input Capacitance(Ciss)2.886nF
TypeP-Channel

Technical details

P-Channel 30V 15A 2.5W Surface Mount TO-252

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