JSMSEMI · FETs & Power MOSFETs · MPN SHY1920W
No reviews yet — be the first to review JSMSEMI SHY1920W.
| Gate Charge(Qg) | 367nC@20V |
|---|---|
| Drain to Source Voltage | 200V |
| Output Capacitance(Coss) | 893pF |
| Current - Continuous Drain(Id) | 90A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 550W |
| Reverse Transfer Capacitance (Crss@Vds) | 561pF |
| RDS(on) | 27mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.784nF |
200V 90A 550W Through Hole TO-247