JSMSEMI SBSC019N04NSGATMA1

JSMSEMI · FETs & Power MOSFETs · MPN SBSC019N04NSGATMA1

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Specifications

Gate Charge(Qg)87nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)200A
Output Capacitance(Coss)1.85nF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation114W
Reverse Transfer Capacitance (Crss@Vds)65pF
RDS(on)1.1mΩ@10V;1.7mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)5.5nF

Technical details

40V 200A 114W Surface Mount PDFN-8L(5x6)

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