JSMSEMI S9018

JSMSEMI · Transistors (BJTs) · MPN S9018

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)600MHz
Collector - Emitter Voltage VCEO18V
Emitter-Base Voltage VEBO4V
DC Current Gain190
Pd - Power Dissipation200mW
Number1 NPN
typeNPN
Current - Collector(Ic)50mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor NPN 18V 50mA 200mW Surface Mount SOT-23

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