JSMSEMI RQJ0303PGDQATL-JSM

JSMSEMI · FETs & Power MOSFETs · MPN RQJ0303PGDQATL-JSM

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)-
Output Capacitance(Coss)-
Current - Continuous Drain(Id)4.3A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation1.4W
RDS(on)75mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)-
Number1 P-Channel
Input Capacitance(Ciss)-
TypeP-Channel

Technical details

30V 4.3A 2V 1.4W 75mΩ@4.5V 1 P-Channel P-Channel SOT-23 Single FETs, MOSFETs RoHS

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